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Researchers at the University of Minnesota have made a significant breakthrough in semiconductor design, creating a new material that allows electrons to move faster while remaining transparent to both visible and ultraviolet light. This groundbreaking material has the potential to revolutionize the next generation of high-power electronics, making them faster, more efficient, and transparent. The research, published in the peer-reviewed scientific journal Science Advances, represents a significant advancement in semiconductor technology, which is essential for the trillion-dollar global electronics industry.

Semiconductors are crucial components in nearly all electronic devices, from smartphones to medical equipment. Improving “ultra-wide band gap” materials is key to advancing digital technologies. These materials can conduct electricity efficiently even under extreme conditions, enabling high performance at elevated temperatures. The development of ultra-wide band gap semiconductors is essential for creating more durable and robust electronics that can meet the demands of rapidly advancing technologies.

The researchers focused on creating a new class of materials with increased “band gap” to enhance both transparency and conductivity. The newly developed transparent conducting oxide has a specialized thin-layered structure that increases transparency without sacrificing conductivity. This achievement supports the development of faster and more efficient devices, opening the door for advancements in computers, smartphones, and potentially even quantum computing. The groundbreaking nature of this development offers a promising solution for the ever-growing demands of technology and artificial intelligence applications.

According to Bharat Jalan, Shell Chair and Professor at the University of Minnesota’s Department of Chemical Engineering and Materials Science, this breakthrough in transparent conducting materials is a game-changer for deep ultra-violet device performance. The new material not only combines unprecedented transparency and conductivity in the deep-ultraviolet spectrum but also enables innovations in high-power and optoelectronic devices that can operate in the most challenging environments. The research conducted by Jalan’s team demonstrates the incredible potential of oxide-based perovskites as semiconductors when defects are controlled.

Fengdeng Liu and Zhifei Yang, chemical engineering and materials science Ph.D. students working in Jalan’s lab, were the study’s first co-authors and played a crucial role in proving the material’s properties for electronic applications. They conducted multiple experiments and managed to eliminate defects in the material to enhance its performance. The detailed electron microscopy revealed that the material was clean with no obvious defects, highlighting the power of oxide-based perovskites as semiconductors. The team’s research also involved Silo Guo from the University of Minnesota and David Abramovitch and Marco Bernardi from the California Institute of Technology.

Overall, the research conducted at the University of Minnesota represents a significant step forward in semiconductor technology, paving the way for the development of faster, more efficient, and transparent high-power electronics. By creating a unique material that combines transparency and conductivity in the deep-ultraviolet spectrum, the researchers have opened up new possibilities for innovations in a wide range of electronic devices. This groundbreaking achievement offers promising solutions for advancing technology and artificial intelligence applications.

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