A new study led by researchers at the University of Minnesota Twin Cities has provided new insights into the breakdown and degradation of next-generation electronics, including memory components in computers. The researchers found that spintronic magnetic tunnel junctions (MTJs) are promising alternatives for the next generation of memory devices, such as Magnetic Random Access Memory (MRAM). These devices use the spin of the electrons to improve the efficiency of data storage solutions in products like smart watches and in-memory computing.
Using a sophisticated electron microscope, the researchers were able to observe the degradation of nanopillars within the MTJs in real time. They found that as they increased the current through the device, the layers became pinched, causing the device to malfunction. This phenomenon had been theorized in previous research but had never been observed before. The researchers also discovered that the device burned out at a much lower temperature than expected, indicating that small materials have very different properties, including melting temperature.
The research team, which included researchers from the University of Minnesota Department of Electrical and Computer Engineering, hopes that this new knowledge can be used to improve the design of computer memory units in order to increase their longevity and efficiency. The team believes that understanding how these devices degrade over time could help in the development of more efficient data storage solutions for the future. This could have significant implications for the semiconductor industry and the development of next-generation microelectronic devices.
The study, published in ACS Nano, a peer-reviewed scientific journal, was funded by SMART, one of seven centers of nCORE, a Semiconductor Research Corp. program sponsored by the National Institute of Standards and Technology (NIST); University of Minnesota Grant-in-Aid funding; National Science Foundation (NSF); and Defense Advanced Research Projects Agency (DARPA). The work was completed in collaboration with the University of Minnesota Characterization Facility and the Minnesota Nano Center. The researchers involved in the study included postdoctoral research associates, research associates, and professors from the University of Minnesota and the University of Arizona Department of Physics.
Overall, the study provides valuable insights into the degradation of next-generation electronics, specifically magnet tunnel junctions used in memory devices. By understanding how these devices degrade over time, researchers hope to improve the efficiency and longevity of data storage solutions for future computing technology. The discovery of the lower temperature at which the devices burn out and the different properties that small materials exhibit at the atomic scale can have significant implications for the development of microelectronic devices in the semiconductor industry.
