The School of Engineering at the Hong Kong University of Science and Technology (HKUST) has made a groundbreaking advancement in the semiconductor industry by developing the world’s first deep-ultraviolet (UVC) microLED display array for lithography machines. Led by Prof. KWOK Hoi-Sing, the research team collaborated with the Southern University of Science and Technology and the Suzhou Institute of Nanotechnology of the Chinese Academy of Sciences. This innovative UVC microLED display array is expected to significantly reduce the cost of maskless photolithography by providing high light output power density for faster exposure of photoresist films.
Traditional lithography machines used in semiconductor manufacturing have limitations such as large device size, low resolution, high energy consumption, and insufficient optical power density. To address these challenges, the research team developed a maskless lithography prototype platform and utilized deep UV microLED technology for improved performance. This new approach enhances optical extraction efficiency, heat distribution, and epitaxial stress relief during the fabrication process, leading to higher power, light efficiency, resolution, display performance, and exposure speed of microLED devices.
The deep-UV microLED display chip developed by the team integrates the ultraviolet light source with the pattern on the mask, providing adequate irradiation dose for photoresist exposure in a shorter time. This breakthrough opens up new possibilities for semiconductor manufacturing by offering a more cost-effective and customizable lithography technology. Prof. KWOK emphasized the importance of this innovation in advancing maskless lithography technology, which has become a key focus in the industry for its ability to adjust exposure patterns and reduce mask preparation costs.
Published in Nature Photonics, the team’s paper titled “High-Power AlGaN Deep-Ultraviolet Micro-Light-Emitting Diode Displays for Maskless Photolithography” has received widespread recognition in the industry. It has been named one of the top ten advances in China’s third-generation semiconductor technology by the 10th International Forum on Wide Bandgap Semiconductors (IFWS) in 2024. Dr. FENG Feng, a postdoctoral research fellow at HKUST’s Department of Electronic and Computer Engineering (ECE), highlighted the key performance enhancements of their innovation, positioning it as a global leader in all metrics.
Moving forward, the research team plans to further enhance the performance of AlGaN deep ultraviolet microLEDs, improve the prototype, and develop high-resolution deep ultraviolet microLED display screens ranging from 2k to 8k. The team consists of Dr. FENG as the first author, Prof. LIU Zhaojun as the corresponding author, Dr. LIU Yibo, Dr. ZHANG Ke, and collaborators from other institutions. Their dedication to advancing semiconductor technology through innovative research and development is expected to have a significant impact on the industry and pave the way for future advancements in lithography and display technologies.
Overall, the development of the world’s first deep-ultraviolet microLED display array for lithography machines by the HKUST research team represents a major breakthrough in the semiconductor industry. This innovation has the potential to revolutionize the way semiconductor manufacturing is done by offering a more efficient and cost-effective solution for maskless photolithography. With key breakthroughs in high power, light efficiency, resolution, display performance, and exposure speed, the team’s deep-UV microLED technology is positioned as a global leader in the field, as recognized by its publication in a top journal and accolades from industry experts. Looking ahead, the team plans to further improve the performance of their technology and develop high-resolution deep ultraviolet microLED display screens, demonstrating their commitment to advancing semiconductor technology and driving innovation in the industry.